2SK2912S - Silicon N Channel MOS FET
2SK2912S Features
* Low on-resistance R DS = 15 mΩ typ.
* High speed switching
* 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source vol
