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2SK2912S Datasheet - Hitachi Semiconductor

2SK2912S - Silicon N Channel MOS FET

2SK2912S Features

* Low on-resistance R DS = 15 mΩ typ.

* High speed switching

* 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source vol

2SK2912S_HitachiSemiconductor.pdf

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Datasheet Details

Part number:

2SK2912S

Manufacturer:

Hitachi Semiconductor

File Size:

53.43 KB

Description:

Silicon n channel mos fet.

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