2SK2912S Silicon N Channel MOS FET

Hitachi Semiconductor

Description

2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st.Edition .

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Datasheet Specifications

Part number: 2SK2912S
Manufacturer: Hitachi Semiconductor
File Size: 53.43 KB
Datasheet: 2SK2912S_HitachiSemiconductor.pdf
Description: Silicon N Channel MOS FET

Features

* Low on-resistance R DS = 15 mΩ typ.
* High speed switching
* 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source vol

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2SK2912S Silicon Channel MOS FET Hitachi Semiconductor

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