Datasheet4U Logo Datasheet4U.com

2SK291 Datasheet - Hitachi Semiconductor

2SK291 Silicon N-Channel Junction FET

2SK291 Silicon N-Channel Junction FET Application Low frequency low noise amplifier Outline TO-92 (2) 1. Drain 2. Source 3. Gate 3 2 1 2SK291 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings 15 15 50 5 300 150 55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate.

2SK291_HitachiSemiconductor.pdf

Preview of 2SK291 PDF
2SK291 Datasheet Preview Page 2 2SK291 Datasheet Preview Page 3

Datasheet Details

Part number:

2SK291

Manufacturer:

Hitachi Semiconductor

File Size:

34.31 KB

Description:

Silicon n-channel junction fet.

2SK291 Distributor

📁 Related Datasheet

2SK2900-01 N-channel MOS-FET (Fuji Electric)

2SK2901-01L N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)

2SK2901-01S N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)

2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)

2SK2903-01MR N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)

2SK2904-01 N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)

2SK2905-01R N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)

2SK2906-01 N-channel MOS-FET (Fuji Electric)

TAGS

2SK291 2SK291 Silicon N-Channel Junction FET Hitachi Semiconductor