2SK291
Hitachi Semiconductor
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Silicon n-channel junction fet.
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📁 Related Datasheet
2SK2900-01 - N-channel MOS-FET
(Fuji Electric)
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MO.
2SK2901-01L - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2901-01L,S
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
2SK2901-01S - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2901-01L,S
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
2SK2902-01MR - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2902-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
2SK2903-01MR - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2903-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
2SK2904-01 - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2904-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FU.
2SK2905-01R - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2905-01R
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
F.
2SK2906-01 - N-channel MOS-FET
(Fuji Electric)
2SK2906-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V
.
2SK2907-01 - N-channel MOS-FET
(Fuji Electric)
2SK2907-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V
.
2SK2907-01R - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2907-01R
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
F.