Part number:
2SK2912L
Manufacturer:
Hitachi Semiconductor
File Size:
53.43 KB
Description:
Silicon n channel mos fet.
* Low on-resistance R DS = 15 mΩ typ.
* High speed switching
* 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source vol
2SK2912L
Hitachi Semiconductor
53.43 KB
Silicon n channel mos fet.
📁 Related Datasheet
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