2SK2912L Datasheet - Hitachi Semiconductor

2SK2912L, Silicon N Channel MOS FET

2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st.Edition .

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Datasheet Details

Part number:

2SK2912L

Manufacturer:

Hitachi Semiconductor

File Size:

53.43 KB

Description:

Silicon N Channel MOS FET

Features

* Low on-resistance R DS = 15 mΩ typ.
* High speed switching
* 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source vol

2SK2912L Distributors

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2SK2912L Silicon Channel MOS FET Hitachi Semiconductor

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