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2SK2980 Silicon N-Channel MOSFET

2SK2980 Description

2SK2980 Silicon N Channel MOS FET High Speed Power Switching .

2SK2980 Features

* Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA)
* 2.5 V gate drive devices.
* Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 G 2 Note: Marking is “ZZ
* ” REJ03G1061-0400 (Previous: ADE-208-571B) Rev.4.00

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Silicon N-Channel MOSFET Renesas
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