Part number:
2SK2925
Manufacturer:
File Size:
84.62 KB
Description:
Silicon n-channel mosfet.
* Low on-resistance RDS = 0.060 Ω typ.
* High speed switching
* 4 V gate drive device can be driven from 5 V source Outline REJ03G1039-0500 (Previous: ADE-208-454B) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code:
2SK2925
84.62 KB
Silicon n-channel mosfet.
📁 Related Datasheet
2SK2920 - Silicon N-Channel MOS Type Field Effect Transistor
(Toshiba Semiconductor)
2SK2920
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV)
2SK2920
Chopper Regulator, DC/DC Converter and Motor Drive Applications
.
2SK2922 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2922
Silicon N Channel MOS FET UHF Power Amplifier
ADE-208-675(Z) 1st. Edition Aug. 1998 Features
• High power output, High gain, High efficiency .
2SK2925 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =.
2SK2925L - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =.
2SK2925L - Silicon N-Channel MOSFET
(Renesas)
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 0.060 Ω typ.
• High speed switching • 4 .
2SK2925S - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =.
2SK2925S - N-Channel Silicon MOSFET
(Guangdong Kexin Industrial)
.DataSheet.co.kr
SMD Type
N-Channel Silicon MOSFET 2SK2925S
IC MOSFET
Features
Low on-resistance RDS =0.060 typ.
+0.15 6.50-0.15 +0.2 5.30-0.2
.
2SK2925S - Silicon N-Channel MOSFET
(Renesas)
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 0.060 Ω typ.
• High speed switching • 4 .
