Part number:
2SK2936
Manufacturer:
File Size:
115.14 KB
Description:
Silicon n channel mos fet.
* Low on-resistance RDS =0.010 Ω typ.
* High speed switching
* 4 V gate drive device can be driven from 5 V source Outline REJ03G1050-0400 (Previous: ADE-208-559B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C
* FM) D G 1. Gate 2.
2SK2936
115.14 KB
Silicon n channel mos fet.
📁 Related Datasheet
2SK2930 - Silicon N Channel MOS FET
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ADE-208-553C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. •.
2SK2931 - Silicon N-Channel MOSFET
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Features
• Low on-resistance RDS =0.010 Ω typ.
• High speed switching • 4 V gate drive de.
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ADE-208-554C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. •.
2SK2932 - Silicon N Channel MOS FET
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ADE-208-555B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.055 Ω typ. •.
2SK2933 - Silicon N Channel MOS FET
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ADE-208-556B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.040Ω ty.
2SK2934 - Silicon N Channel MOS FET
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ADE-208-557B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.026 Ω typ. •.
2SK2935 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2935
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-558B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. •.
2SK2936 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2936
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-559B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. •.
