2SK2930 Datasheet - Hitachi Semiconductor

2SK2930 Silicon N Channel MOS FET

2SK2930 Features

* Low on-resistance R DS =0.020 Ω typ.

* High speed switching

* 4V gate drive device can be driven from 5V source Outline TO

* 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to so

Datasheet Details

2SK2930

Hitachi Semiconductor

53.14 KB

Silicon n channel mos fet.

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2SK2930 Silicon Channel MOS FET Hitachi Semiconductor

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