2SK2935 Silicon N Channel MOS FET

Hitachi Semiconductor

Description

2SK2935 Silicon N Channel MOS FET High Speed Power Switching ADE-208-558B (Z) 3rd.Edition Jun 1998 .

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Datasheet Specifications

Part number: 2SK2935
Manufacturer: Hitachi Semiconductor
File Size: 51.71 KB
Datasheet: 2SK2935_HitachiSemiconductor.pdf
Description: Silicon N Channel MOS FET

Features

* Low on-resistance R DS =0.020 Ω typ.
* High speed switching
* 4V gate drive device can be driven from 5V source Outline TO
* 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2935 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source v

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2SK2935 Silicon Channel MOS FET Hitachi Semiconductor

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