2SK2930, Hitachi Semiconductor
2SK2930
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-553C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. •.
2SK2931, Renesas
2SK2931
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.010 Ω typ.
• High speed switching • 4 V gate drive de.
2SK2931, Hitachi Semiconductor
2SK2931
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-554C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. •.
2SK2933, Hitachi Semiconductor
2SK2933
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-556B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.040Ω ty.
2SK2934, Hitachi Semiconductor
2SK2934
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-557B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.026 Ω typ. •.
2SK2935, Hitachi Semiconductor
2SK2935
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-558B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. •.
2SK2936, Hitachi Semiconductor
2SK2936
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-559B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. •.
2SK2936, Renesas
2SK2936
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.010 Ω typ.
• High speed switching • 4 V gate drive de.
Stock and price
Renesas Electronics Corporation
Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220CFM Tube
