2SK2932 - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2932
Manufacturer	Hitachi Semiconductor
File Size	50.80 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2932_HitachiSemiconductor.pdf

Low on-resistance R DS =0.055 Ω typ.
High speed switching.
4V gate drive device can be driven from 5V source Outline TO.
220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2932 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID.

📁 2SK2932 Similar Datasheet

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |