Part number:
2SK2933
Manufacturer:
Hitachi Semiconductor
File Size:
51.56 KB
Description:
Silicon n channel mos fet.
* Low on-resistance R DS(on) = 0.040Ω typ.
* 4V gate drive devices.
* High speed switching Outline TO
* 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Dr
2SK2933
Hitachi Semiconductor
51.56 KB
Silicon n channel mos fet.
📁 Related Datasheet
2SK2930 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2930
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-553C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. •.
2SK2931 - Silicon N-Channel MOSFET
(Renesas)
2SK2931
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.010 Ω typ.
• High speed switching • 4 V gate drive de.
2SK2931 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2931
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-554C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. •.
2SK2932 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2932
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-555B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.055 Ω typ. •.
2SK2934 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2934
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-557B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.026 Ω typ. •.
2SK2935 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2935
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-558B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. •.
2SK2936 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2936
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-559B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. •.
2SK2936 - Silicon N Channel MOS FET
(Renesas)
2SK2936
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.010 Ω typ.
• High speed switching • 4 V gate drive de.
