2SK2937 Datasheet, Fet, Renesas

2SK2937 Features

  • Fet
  • Low on-resistance RDS =0.026 Ω typ.
  • High speed switching
  • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (P

PDF File Details

Part number:

2SK2937

Manufacturer:

Renesas ↗

File Size:

140.06kb

Download:

📄 Datasheet

Description:

Silicon n channel mos fet.

Datasheet Preview: 2SK2937 📥 Download PDF (140.06kb)
Page 2 of 2SK2937 Page 3 of 2SK2937

TAGS

2SK2937
Silicon
Channel
MOS
FET
Renesas

📁 Related Datasheet

2SK2930 - Silicon N Channel MOS FET (Hitachi Semiconductor)
2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.020 Ω typ. •.

2SK2931 - Silicon N-Channel MOSFET (Renesas)
2SK2931 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive de.

2SK2931 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2931 Silicon N Channel MOS FET High Speed Power Switching ADE-208-554C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. •.

2SK2932 - Silicon N Channel MOS FET (Hitachi Semiconductor)
2SK2932 Silicon N Channel MOS FET High Speed Power Switching ADE-208-555B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.055 Ω typ. •.

2SK2933 - Silicon N Channel MOS FET (Hitachi Semiconductor)
2SK2933 Silicon N Channel MOS FET High Speed Power Switching ADE-208-556B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.040Ω ty.

2SK2934 - Silicon N Channel MOS FET (Hitachi Semiconductor)
2SK2934 Silicon N Channel MOS FET High Speed Power Switching ADE-208-557B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.026 Ω typ. •.

2SK2935 - Silicon N Channel MOS FET (Hitachi Semiconductor)
2SK2935 Silicon N Channel MOS FET High Speed Power Switching ADE-208-558B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.020 Ω typ. •.

2SK2936 - Silicon N Channel MOS FET (Hitachi Semiconductor)
2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. •.

2SK2936 - Silicon N Channel MOS FET (Renesas)
2SK2936 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive de.

2SK2937 - Silicon N Channel MOS FET (Hitachi Semiconductor)
2SK2937 Silicon N Channel MOS FET High Speed Power Switching ADE-208-560C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.026 Ω typ. •.

Stock and price

part
Renesas Electronics Corporation
Power MOSFET, N Channel, 60 V, 25 A, 34 Milliohms, TO-220FM, 3 Pins, Through Hole (Alt: 2SK2937-E)
Avnet Asia
2SK2937-E
0 In Stock
0
Unit Price : $0
No Longer Stocked
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