K32 Datasheet | Specifications & PDF Download

LNK3202/3204-6, LNK3294 & LNK3296 LinkSwitch-TN2 Family Highly Energy Efficient Off-line Switcher IC with Integrated System Level Protection for Low C

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MULTILAYER CERAMIC CHIP CAPACITORS Upgrade Surface Mount Device ?FEATURES 1. Large capacitance by small size. 2. Excellent noise absorption. 3. High

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BK3266 Datasheet v 0.5 BK3266 Bluetooth Audio SoC Datasheet Beken Corporation 41，1387 Zhangdong Rd, Shanghai 201203, China PHONE: (86)21 5108 6811

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ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features s 4 Low Power CMOS 512K x 8 SRAMs in one MCM s Overall configuration as 512

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RK3229 Datasheet Rev 1.2 Rockchip RK3229 Datasheet Revision 1.2 Jun. 2017 Copyright © 2017 FuZhou Rockchip Electronics Co., Ltd. -1- RK3229 Data

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DS182 (v2.16) May 8, 2017 Kintex-7 FPGAs Data Sheet: DC and AC Switching Characteristics Product Specification Introduction Kintex®-7 FPGAs are avai

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BK3221 Datasheet v 0.1 BK3221 Bluetooth Speaker Datasheet Objective Specification Name Approvals Date Signature Beken Corporation 3A，1278 Keyuan

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i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated M

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BK3231 v0.1 BK3231 Bluetooth HID SoC Datasheet Objective Specification Beken Corporation 3A,1278KeyuanRd,Zhangjiang High-Tech Park Pudong new Distr

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3204 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3204 is N-Channel MOS Field Effe

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2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista

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2SK3233 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1369 (Z) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) =

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2SK3262-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

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www.DataSheet4U.com DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTE

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www.DataSheet4U.com 2SK3234 N MOS FET ADJ-208-696F (Z) 7 2002.01 • • • • • RDS(on) =0.65Ω typ. IDSS=1µA max (at VDS=500V) tf=25ns typ (at VGS=10V,

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www.DataSheet4U.com 2SK2329(L), 2SK2329(S) Silicon N Channel MOS FET REJ03G1008-0200 (Previous: ADE-208-1356) Rev.2.00 Sep 07, 2005 Application High

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2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS (on) = 6 mΩ typ.

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Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 1

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RP506x Series 2 A PWM/VFM Step-down DC/DC Converter with Synchronous Rectifier NO.EA-296-130925 OUTLINE The RP506x are low supply current CMOS-based P

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WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns  MIL-STD-883 Compliant Devi

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