2SK3418 Silicon N Channel MOS FET High Speed Power.
Hitachi Semiconductor
2SK3418 - Silicon N Channel MOS FET
2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4.3 m typ. • 4 V gate drive device • High speed s.
Renesas
2SK3418 - Silicon N-Channel MOSFET
2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High sp.
Renesas
K3418 - Silicon N-Channel MOSFET
2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High sp.
