K9K8G08U1M (Samsung)
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9K8G08U1M K9F4G08U0M
FLASH MEMORY
K9XXG08UXM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WI
(35 views)
K9K8G08U0D (Samsung)
4Gb D-die NAND Flash
www.DataSheet4U.net
Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D
Advance
4Gb D-die NAND Flash
Single-Level-Cell (1bit/cell)
datashee
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BUK9K12-60E (NXP Semiconductors)
Dual N-Channel MOSFET
LF
BUK9K12-60E
8 May 2014
PA K
56D
Dual N-channel 60 V, 11.5 mΩ logic level MOSFET
Product data sheet
1. General description
Dual logic level N-
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K9K4G16U0M (Samsung)
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G08U1M K9K4G08Q0M K9K4G08U0M
K9K4G16Q0M K9K4G16U0M
FLASH MEMORY
Document Title
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
Revision History
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K9K8G08U1B (Samsung)
FLASH MEMORY
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K9K4G08Q0M (Samsung)
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G08U1M K9K4G08Q0M K9K4G08U0M
K9K4G16Q0M K9K4G16U0M
FLASH MEMORY
Document Title
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
Revision History
(29 views)
BUK9K13-40H (nexperia)
Dual N-channel MOSFET
BUK9K13-40H
Dual N-channel 40 V, 13 mOhm logic level MOSFET in
LFPAK56D
11 February 2021
Product data sheet
1. General description
Dual, Logic le
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BUK9K35-60RA (nexperia)
Dual N-channel MOSFET
BUK9K35-60RA
Dual N-channel 60 V, 35 mOhm logic level MOSFET in
LFPAK56D using Repetitive Avalanche technology
2 December 2020
Product data sheet
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K9K2G08Q0M (Samsung semiconductor)
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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K9K8G08U0F (Samsung)
4Gb F-die NAND Flash
SAMSUNG CONFIDENTIAL
Rev. 1.2, Jul. 2016 K9F4G08U0F K9K8G08U0F K9WAG08U1F
4Gb F-die NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
SAMSUNG ELECTRO
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BUK9K134-100E (NXP Semiconductors)
MOSFET
LF
BUK9K134-100E
10 December 2013
PA K
56D
Dual N-channel 100 V, 159 mΩ logic level MOSFET
Product data sheet
1. General description
Dual logic
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BUK9K25-40RA (nexperia)
Dual N-channel MOSFET
BUK9K25-40RA
Dual N-channel 40 V, 29 mOhm logic level MOSFET in
LFPAK56D using Repetitive Avalanche technology
2 December 2020
Product data sheet
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BUK9K35-60E (NXP Semiconductors)
Dual N-Channel MOSFET
LF
BUK9K35-60E
23 April 2013
PA K
56D
Dual N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Dual logic level N-chan
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BUK9K25-40E (NXP)
Dual N-channel MOSFET
LFPAK56D
BUK9K25-40E
Dual N-channel 40 V, 29 mΩ logic level MOSFET
10 December 2013
Product data sheet
1. General description
Dual logic level N-
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BUK9K18-40E (NXP Semiconductors)
Dual N-channel TrenchMOS logic level FET
LF
BUK9K18-40E
23 April 2013
PA K
56D
Dual N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Dual logic level N-chan
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BUK9K32-100E (nexperia)
Dual N-channel MOSFET
BUK9K32-100E
Dual N-channel 100 V, 33 mΩ logic level MOSFET
10 December 2013
Product data sheet
1. General description
Dual logic level N-channel
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BUK9K13-60RA (nexperia)
Dual N-channel MOSFET
BUK9K13-60RA
Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in
LFPAK56D using Repetitive Avalanche technology
2 December 2020
Product data shee
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K9K8G08U0A (Samsung semiconductor)
(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
www.DataSheet4U.com
K9WAG08U1A K9K8G08U0A K9NBG08U5A
FLASH MEMORY
K9XXG08UXA
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODU
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BUK9K134-100E (nexperia)
Dual N-channel MOSFET
BUK9K134-100E
Dual N-channel 100 V, 159 mΩ logic level MOSFET
10 December 2013
Product data sheet
1. General description
Dual logic level N-channe
(24 views)
K9K2G16Q0M-Y (Samsung)
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi
(23 views)