KSD2012 Datasheet | Specifications & PDF Download

NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier KSD2012 • Complementary to KSB1366 • This is a Pb−Free Device ABSOLUTE MAXIMUM RATING

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isc Silicon NPN Power Transistor KSD2012 DESCRIPTION ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Ma

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KSD2012 KSD2012 Low Frequency Power Amplifier • Complement to KSB1366 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Abs

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