KTC4379 Datasheet | Specifications & PDF Download

30Ω J B EU SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Saturation Voltage : VCE(sat)=0.5V

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Product specification KTC4379 SOT-89 Unit:mm 1.50 ±0.1 ■ Features ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A ● Complementary

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KTC4379 TRANSISTOR (NPN) FEATURES Low saturation voltage z High speed switching time z Complementary to KTA1666 z MAXIMUM RATINGS (TA=25℃ unless other

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Production specification NPN Silicon Epitaxial Planar Transistor FEATURES Pb  High speed switching time. Lead-free  Low saturation voltage:VCE

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KTC4379 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector

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REPLACEMENT TYPE : KTC4379 FEATURES  Low Saturation Voltage  High Speed Switching Time  Complementary to HEA1666 HETC4379(NPN) GENERAL PURPOSE TRA

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KTC4379 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN 。Silicon NPN transistor in a SOT-89 Plastic Package.  / Features ,，， KTA1666。 Lo

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SMD Type NPN Transistors KTC4379 Transistors ■ Features ● Low saturation voltage ● High speed switching time ● Complementary to KTA1666 1.70 0.1

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