KTD1351 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistors DESCRIPTION ·Low Saturation Voltage- : VCE(sat)=1.0V(Max)@ (IC= 2A, IB=0.2A) ·High Collector-Emitter Breakdown Volt

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors KTD1351 TRANSISTOR (NPN) FEATURES z Low Saturations Voltage

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌLow Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A ᴌComplementary to K

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KTD1351 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package.  / Features , KTB988 。 High

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