KTD1898 Datasheet | Specifications & PDF Download

Production specification Power Transistor FEATURES z High VCEO,VCEO=80V. z High IC,IC=1A(DC). z Good HFE Linearity. z Low VCE(sat). z Complement the

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KTD189 TRANSISTOR (NPN) FEATURES z Small Flat Package z General Purpose Application SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTD1898 TRANSISTOR (NPN) SOT-89-3L FEATURES z Small Fl

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KTD1898 Epitaxial Planar NPN Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Base Volt

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KTD1898 Elektronische Bauelemente 1A , 100V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

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RoHS KTD1898 KTD1898 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A O

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SMD Type NPN Transistors KTD1898 Transistors ■ Features ● Small Flat Package ● General Purpose Application 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTB1260. M

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