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L14N Datasheet, Features, Application

L14N HERMETIC SILICON PHOTOTRANSISTOR

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Crownpo
rating-1 4

SL14N - 1.0A Surface Mount Schottky Barrier Rectifiers

Low VF Chip Schottky Barrier Rectifier Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal .
QT Optoelectronics
rating-1 3

L14N - HERMETIC SILICON PHOTOTRANSISTOR

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WAYON
rating-1 2

WML14N60C2 - Super Junction Power MOSFET

WML14N60C2, WMK14N60C2, WMM14N60C2 WMN14N60C2, WMP14N60C2, WMO14N60C2 600V 0.36Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen.
Weitron Technology
rating-1 2

SL14N - Low VF Schottky Barrier Diodes

SL12N thru SL14N Low VF Schottky Barrier Diodes P b Lead(Pb)-Free Features: *Plastic package has Underwriters Laboratory Flammability Classi cation 94.
WAYON
rating-1 2

WML14N65C2 - Super Junction Power MOSFET

WML14N65C2, WMK14N65C2, WMM14N65C2 WMN14N65C2, WMP14N65C2, WMO14N65C2 650V 0.36Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen.
Fairchild Semiconductor
rating-1 1

L14N1 - HERMETIC SILICON PHOTOTRANSISTOR

HERMETIC SILICON PHOTOTRANSISTOR L14N1 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) L14N2 0.030 (0.76) MAX 0.210 (5.34) .
QT Optoelectronics
rating-1 1

L14N1 - HERMETIC SILICON PHOTOTRANSISTOR

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Fairchild Semiconductor
rating-1 1

L14N2 - HERMETIC SILICON PHOTOTRANSISTOR

HERMETIC SILICON PHOTOTRANSISTOR L14N1 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) L14N2 0.030 (0.76) MAX 0.210 (5.34) .
QT Optoelectronics
rating-1 1

L14N2 - HERMETIC SILICON PHOTOTRANSISTOR

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