GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chi.
Siemens Group
4
LD261 - GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position LD 261 2.4 2.1 1.9 1.7 0.5 0.4 2.7 2.5 0.25 0.15 0.7 0.6 0 ... 5 0.4 A A Radiant.
Fairchild Semiconductor
2
FLLD261 - HIGH CONDUCTANCE LOW LEAKAGE DIODE
FLLD261 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD . . . .350 mW @ TA = 25 Deg C BV . . . .200 V (MIN) @ IR = 5 uA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPER.
Zetex Semiconductors
1
FLLD261 - SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR
SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR ISSUE 2 SEPTEMBER 1995 7 FLLD261 2 DIODE PIN CONNECTION 1 3 3 1 2 SOT23 PART MARKING DETAIL.
Siemens Group
1
LD261-5 - GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position LD 261 2.4 2.1 1.9 1.7 0.5 0.4 2.7 2.5 0.25 0.15 0.7 0.6 0 ... 5 0.4 A A Radiant.