LD261-5 Datasheet | Specifications & PDF Download

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position LD 261 2.4 2.1 1.9 1.7 0.5 0.4 2.7 2.5 0.25 0.15 0.7 0.6 0 5 0.4 A A Radiant

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FLLD261 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD . . . .350 mW @ TA = 25 Deg C BV . . . .200 V (MIN) @ IR = 5 uA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPER

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SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR ISSUE 2 – SEPTEMBER 1995 7 FLLD261 2 DIODE PIN CONNECTION 1 3 3 1 2 SOT23 PART MARKING DETAIL

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position LD 261 2.4 2.1 1.9 1.7 0.5 0.4 2.7 2.5 0.25 0.15 0.7 0.6 0 5 0.4 A A Radiant

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(3 views)