LM-596_E Datasheet | Specifications & PDF Download

3.0 A, Step-Down Switching Regulator LM2596 The LM2596 regulator is monolithic integrated circuit ideally suited for easy and convenient design of a s

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www.DataSheet4U.com ISSUED DATE :2005/04/15 REVISED DATE :2006/06/26B G5ULM2596 The G5ULM2596 series of regulators are monolithic integrated circuits

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FEATURES  High Output Power: P1dB=42.5dBm (Typ)  High Gain: G1dB=10.0dB (Typ.)  High PAE: add=40 %( Typ.)  Frequency Band: 5.9~6.4GHz  Impedance

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FLM5964-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB =10.0dB (Typ.) • High PAE: hadd = 37% (

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LM2596 SIMPLE SWITCHER Power Converter 150 kHz 3A Step-Down Voltage Regulator December 1997 LM2596 SIMPLE SWITCHER ® Power Converter 150 kHz 3A Step

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3.0A, 150kHz, Step-Down Switching Regulator FEATURES ⚫ 3.3V, 5.0V, 12V, and Adjustable Output version ⚫ Adjustable Output Voltage range, 1.2V to 37V ±

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ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: hadd=37% (Typ.) Freq

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LM1596 LM1496 Balanced Modulator-Demodulator February 1995 LM1596 LM1496 Balanced Modulator-Demodulator General Description The LM1596 LM1496 are do

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FLM8596-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE:

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FLM8596-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE:

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FLM8596-15F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=7.5dB(Typ.) ・High PAE: ηadd=32%(Typ.) ・Broa

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FLM8596-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE:

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FEATURES ・High Output Power: P1dB=47.0dBm(Typ.) ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=39%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/

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FEATURES ・High Output Power: P1dB=45.5dBm(Typ.) ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/

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w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 39.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =

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w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 38.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =

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