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LP3382S - Constant Current Switching Regulator
Preliminary Datasheet LP3382S High Performance, Constant Current Switching Regulator For 8PCS White LED In Series General Description The LP3382S i.AIM702S60V1 - Intelligent Power Module
AIM702S60V1 Intelligent Power Module External View Size: 18 x 7.5 x 2.5 mm Features • 600V, RDS(on) = 4.2Ω (Max) • Advanced MOSFET technology (αMOS5.LP62S16128CV-70LLI - 128K X 16 BIT LOW VOLTAGE CMOS SRAM
LP62S16128C-I Series Preliminary Document Title 128K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 128K X 16 BIT LOW VOLTAGE CMOS SRAM.LP62S2048M-70LI - 256K X 8 BIT LOW VOLTAGE CMOS SRAM
LP62S2048-I Series 256K X 8 BIT LOW VOLTAGE CMOS SRAM Features n Power supply range: 2.7V to 3.3V n Access times: 70/100 ns (max.) n Current: Low powe.LP62S2048U-70LLI - 256K X 8 BIT LOW VOLTAGE CMOS SRAM
LP62S2048-I Series 256K X 8 BIT LOW VOLTAGE CMOS SRAM Features n Power supply range: 2.7V to 3.3V n Access times: 70/100 ns (max.) n Current: Low powe.AOT42S60 - Power Transistor
AOT42S60/AOB42S60 600V 37A α MOS TM Power Transistor General Description Product Summary The AOT42S60 & AOB42S60 have been fabricated using the adv.3LP02SP - Ultrahigh-Speed Switching Applications
www.DataSheet4U.com Ordering number:ENN6554 P-Channel Silicon MOSFET 3LP02SP Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · .AOK42S60 - Power Transistor
AOK42S60 600V 39A α MOS TM Power Transistor General Description The AOK42S60 has been fabricated using the advanced αMOSTM high voltage process that.HYMP512S64CLP8-E3 - 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb C ver. This Hynix unbuffered Small Outline Dual In-Line Memory Module(DIMM) series consists of 5.HYMP512S64CLP8-Y5 - 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb C ver. This Hynix unbuffered Small Outline Dual In-Line Memory Module(DIMM) series consists of 5.HYMP532S64CLP6-S6 - 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb C ver. This Hynix unbuffered Small Outline Dual In-Line Memory Module(DIMM) series consists of 5.LP62S16512-T - 512K X 16 BIT LOW VOLTAGE CMOS SRAM
LP62S16512-T Series Preliminary Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.2 512K X 16 BIT LOW VOLTAGE CMOS SRAM .LP62S2048A-I - 256K X 8 BIT LOW VOLTAGE CMOS SRAM
LP62S2048A-I Series Preliminary Document Title 256K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 256K X 8 BIT LOW VOLTAGE CMOS SRAM H.LP62S4096E-I - 512K X 8 BIT LOW VOLTAGE CMOS SRAM
LP62S4096E-I Series 512K X 8 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 2.0 History Change.LP62S4096E-T - 512K X 8 BIT LOW VOLTAGE CMOS SRAM
LP62S4096E-T Series 512K X 8 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 2.0 History Change.LP62S1024A-I - 128K X 8 BIT LOW VOLTAGE CMOS SRAM
LP62S1024A-I Series Preliminary Features n Power supply range: 2.7V to 3.6V n Access times: 55/70 ns (max.) n Current: Very low power version: Operati.LP62S1024AM-55LLT - 128K X 8 BIT LOW VOLTAGE CMOS SRAM
LP62S1024A-T Series 128K X 8 BIT LOW VOLTAGE CMOS SRAM Features n Power supply range: 2.7V to 3.6V n Access times: 55/70 ns (max.) n Current: Very low.LP62S1024AU-55LLT - 128K X 8 BIT LOW VOLTAGE CMOS SRAM
LP62S1024A-T Series 128K X 8 BIT LOW VOLTAGE CMOS SRAM Features n Power supply range: 2.7V to 3.6V n Access times: 55/70 ns (max.) n Current: Very low.LP62S1024AV-55LLT - 128K X 8 BIT LOW VOLTAGE CMOS SRAM
LP62S1024A-T Series 128K X 8 BIT LOW VOLTAGE CMOS SRAM Features n Power supply range: 2.7V to 3.6V n Access times: 55/70 ns (max.) n Current: Very low.LP62S1024AV-70LLI - 128K X 8 BIT LOW VOLTAGE CMOS SRAM
LP62S1024A-I Series Preliminary Features n Power supply range: 2.7V to 3.6V n Access times: 55/70 ns (max.) n Current: Very low power version: Operati.