LSG Datasheet | Specifications & PDF Download

LSC04N70A/LSD04N70A/LSG04N70A/LSH04N70A LonFET Lonten N-channel 700V, 4A, 0.96Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated

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Multi TOPLED® RG LSG T770 Besondere Merkmale Gehäusebauform: P-LCC-4 Gehäusefarbe: weiß als optischer Indikator einsetzbar zur Hinterleuchtung, Lich

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ

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BSC016N03LS G OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to J

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LSC04N65/LSD04N65/LSG04N65/LSH04N65 LonFET Lonten N-channel 650V, 4A, 0.96Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated usi

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BSC100N03LS G OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to J

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ATS627LSG True Zero Speed, Low Jitter, High Accuracy Position Sensor IC Features and Benefits • Highly accurate in presence of: ▫ Anomalous target ge

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Specifications in this document are tentative and subject to change Datasheet TP65H150G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) Description

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BSC035N04LS G MOSFET OptiMOSTM 3 Power-Transistor, 40 V Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Quali

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OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for

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ATS605LSG Dual Output Differential Speed and Direction Sensor IC FEATURES AND BENEFITS • Two independent digital outputs representing the sensed tar

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ATS693LSG (RSNYPH) Three-Wire, Differential, Vibration Resistant Sensor IC with Speed and Direction Output FEATURES AND BENEFITS ▪ P option (pulses a

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NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P50N03LSG TO-263 (D2PAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) I

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3 mm (T1) MULTILED®, Non Diffused LSG 3331 Besondere Merkmale nicht eingefärbtes, klares Gehäuse antiparallel geschaltete Leuchtdiodenchips hohe Sig

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ

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BSC200P03LS G OptiMOS™-P Power-Transistor Features • P-Channel • Enhancement mode • Logic level • 150°C operating temperature Product Summary V DS R

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