Xi′an Longtium Microelectronics Technology Devel.
LT7N60A - N-channel MOSFET
Xi′an Longtium Microelectronics Technology Developing Co., Ltd. Features High ruggedness RDS(ON) (Max 1.3 Ω)@VGS=10V Gate Charge (Typ 38nC) Im.LT7N60 - N-channel MOSFET
Xi′an Longtium Microelectronics Technology Developing Co., Ltd. Features High ruggedness RDS(ON) (Max 1.3 Ω)@VGS=10V Gate Charge (Typ 38nC) Im.