LU2 Datasheet | Specifications & PDF Download

NLU2G16 Dual Non-Inverting Buffer The NLU2G16 MiniGatet is an advanced high−speed CMOS dual non−inverting buffer in ultra−small footprint. The NLU2G1

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NLU2G14 Dual Schmitt-Trigger Inverter The NLU2G14 MiniGatet is an advanced high−speed CMOS dual Schmitt−trigger inverter in ultra−small footprint. The

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IRLR/U2905PbF l l l l l l l l PD- 95084A Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced P

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LU1 thru LU5 Surface Mount Glass Passivated superfast recovery Rectifier Reverse Voltage 50~600V Forward Current 1A Features • Glass passivated Supe

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LU2905 N-Channel 60 V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.032 at VGS = 10 V 60 0.037 at VGS = 4.5 V ID (A) 35d 30d

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16 TYPE FSLU2520 Wirewound Chip Inductors Meeting Your Needs The FSLU2520 Series is a ferrite core wirewound surface mount chip inductor which con

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LU234 Photo DMOS-FET Relay Description The LU234 is a miniature 1-Form B solid state relay in a 4 pin SOP package that employs optically coupled MOS

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NLU2GU04 Dual Unbuffered Inverter The NLU2GU04 MiniGatet is an advanced high−speed CMOS dual unbuffered inverter in ultra−small footprint. This devic

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PD- 91334E IRLR/U2905 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU

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PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperat

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PD - 95552A AUTOMOTIVE MOSFET Features l l l l l l l HEXFET® Power MOSFET D IRLR2908PbF IRLU2908PbF VDSS = 80V RDS(on) = 28m Ω Advanced Process Te

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PD- 95083A IRLR/U2703PbF l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Proc

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AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 • Advanced Planar Technology • Logic-Level Gate Drive • Low On-Resistance • Dynamic dV/dT Rating • 175°C Oper

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DISCRETE SEMICONDUCTORS DATA SHEET BLU20/12 UHF power transistor Product specification August 1986 Philips Semiconductors UHF power transistor Prod

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IPLU250N04S4-1R7 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operatin

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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APT50M75JLLU2 APT50M75JLLU2 500V 51A 0.075W S G D K POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement

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NLU2G17 Dual Non-Inverting Schmitt-Trigger Buffer The NLU2G17 MiniGatet is an advanced high−speed CMOS dual non−inverting Schmitt−trigger buffer in u

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www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved

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