Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
Features
- - 1.9A, 600V, RDS(on) = 4.5Ω@VGS = 10 V - Low gate charge ( typical 6.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability
D
D
GS
D-PAK
GDS
I-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted
S
Symbol
Parameter
SLD2N60UZ / SLU2N60UZ
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC.
SLU2N60UZ-MapleSemiconductor.pdf
