Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
Features
- - 4.5A, 650V, RDS(on) = 2.5Ω(typ)@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
GS
D-PAK
GDS
I-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLD4N65C / SLU4N65C
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current - Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1).
SLU4N65C-MapleSemiconductor.pdf
