SLU4N60S

N-Channel MOSFET

Maple Semiconductor

SLU4N60S Features

* - 4.0A, 600V, RDS(on)Typ= 2.0Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD4N60S SLU4N60S VD

SLU4N60S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLU4N60S Datasheet (478.77 KB)

SLU4N60S Datasheet Preview — Preview of SLU4N60S PDF

Datasheet Details

Part number:

SLU4N60S

Manufacturer:

Maple Semiconductor

File Size:

478.77 KB

Description:

N-channel mosfet.

📁 Related Datasheet

SLU4N60C N-Channel MOSFET (Maple Semiconductor)

SLU4N65C N-Channel MOSFET (Maple Semiconductor)

SLU4N70C N-Channel MOSFET (Maple Semiconductor)

SLU11N35UZ N-Channel MOSFET (Maple Semiconductor)

SLU11N40UZ N-Channel MOSFET (Maple Semiconductor)

SLU2N60UZ N-Channel MOSFET (Maple Semiconductor)

SLU2N65UZ N-Channel MOSFET (Maple Semiconductor)

SLU301VR High Power Laser Diode with a Datachable Fiber (Sony)

SLU301XR High Power Laser Diode with a Datachable Fiber (Sony)

SLU50R290SJ N-Channel MOSFET (Maple Semiconductor)

TAGS

SLU4N60S N-Channel MOSFET Maple Semiconductor

Image Gallery

SLU4N60S Features

SLU4N60S General Description

Datasheet Details

File Size:

Description:

SLU4N60S Distributor