SLU4N70C Datasheet - Maple Semiconductor

SLU4N70C N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLU4N70C Features

* - 3A, 700V, RDS(on)typ. = 3.0Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD4N70C / SLU4N70C VDSS

SLU4N70C Datasheet (883.33 KB)