SLU2N65UZ

N-Channel MOSFET

Maple Semiconductor

SLU2N65UZ Features

* - 1.9A, 650V, RDS(on)typ = 3.45Ω@VGS = 10 V - Low gate charge ( typical 5.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD2N65UZ / SLU2N65UZ

SLU2N65UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLU2N65UZ Datasheet (909.27 KB)

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SLU2N65UZ

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Maple Semiconductor

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909.27 KB

Description:

N-channel mosfet.

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SLU2N65UZ N-Channel MOSFET Maple Semiconductor

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SLU2N65UZ Features

SLU2N65UZ General Description

Datasheet Details

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