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SLU2N65UZ Datasheet - Maple Semiconductor

SLU2N65UZ-MapleSemiconductor.pdf

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Datasheet Details

Part number:

SLU2N65UZ

Manufacturer:

Maple Semiconductor

File Size:

909.27 KB

Description:

N-channel mosfet.

SLU2N65UZ, N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices

SLU2N65UZ Features

* - 1.9A, 650V, RDS(on)typ = 3.45Ω@VGS = 10 V - Low gate charge ( typical 5.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD2N65UZ / SLU2N65UZ

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