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L2SC2412KQLT1 - General Purpose Transistors NPN Silicon
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412K*LT1 • Pb−Free Package is Available. www.DataSheet4U.com 3 COLLECTOR .L2SA1036KRLT1G - Medium Power Transistor
LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series FFeatures S-L2SA1036KQLT1G Series .L2SC1623RLT1 - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = 50 V. ƽEpitaxial planar type. ƽPNP complement: L2SA812 www.Data.L2SC2412KRLT3G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- .L2SC4226T3G - High-Frequency Amplifier Transistor
LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for.L2SD1781KQLT1 - Medium Power Transistor
LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor (32V, 0.8A) L2SD1781K*LT1www.DataSheet4U.com FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V .L2SA812SLT3G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. S-L2SA812Q.L2SC3837LT1G - High-Frequency Amplifier Transistor
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(T.L2SC4083PWT1 - High-Frequency Amplifier Transistor
LRC LESHAN RADIO COMPANY,LTD. High-Frequency Amplifier Transistor L2SC4083PWT1 z www.DataSheet4U.com 1 BASE 2 EMITTER 3 COLLECTOR 3 1 2 SC-70/SOT.L2SA812QLT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr.L2SA812SLT1 - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr.L2SA1036KQLT1 - Medium Power Transistor
LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036K*LT1 www.DataSheet4U.com FFeatures 1) Large IC. ICMax. = *500mA 2) Low .L2SC2412KRLT1 - General Purpose Transistors NPN Silicon
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412K*LT1 • Pb−Free Package is Available. www.DataSheet4U.com 3 COLLECTOR .S-L2SC2412KQMT3G - General Purpose Transistor
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- .L2SC4081RT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽLow Cob,Cob=2pF(Typ.). L2SC4081QT1G Series S-L2SC4081QT1G Series ƽEpit.L2SC1623RLT3G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique .L2SC2412KQLT1G - General Purpose Transistors NPN Silicon
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412K*LT1 • Pb−Free Package is Available. www.DataSheet4U.com 3 COLLECTOR .L2SC2412KRLT1G - General Purpose Transistors NPN Silicon
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412K*LT1 • Pb−Free Package is Available. www.DataSheet4U.com 3 COLLECTOR .S-L2SA1365FLT3G - General Purpose Transistor
LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high.L2SC2412KRMT3G - General Purpose Transistor
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- .