L2SC3356LT1 Datasheet, Transistor, Leshan Radio Company

L2SC3356LT1 Features

  • Transistor
  • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
  • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

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Part number:

L2SC3356LT1

Manufacturer:

Leshan Radio Company

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166.32kb

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📄 Datasheet

Description:

High-frequency amplifier transistor. www.DataSheet4U.com 1 2 The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for It has dynamic range and good current c

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TAGS

L2SC3356LT1
High-Frequency
Amplifier
Transistor
Leshan Radio Company

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