Description
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.L2SC3356WT1G S-L2SC3356WT1G
3
ORDERING INFORMATION
Device
L2SC3356WT1G S-L2SC3356WT1G L2SC3356WT3G S-L2SC3356WT3G
Marking 24 24
Shipping 3000/Tape & Reel 10000/Tape & Reel
1 2
SC-70
FEA
Features
- We declare that the material of product compliance with RoHS requirements.
- Low Noise and High Gain
NF = 1.1 dB TYP. , Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz.
- High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.