L2SC3356WT1G-LeshanRadioCompany.pdf
Datasheet Details
Part number:
L2SC3356WT3G, L2SC3356WT1G
Manufacturer:
Leshan Radio Company
File Size:
157.13 KB
Description:
High-frequency amplifier transistor.
Note:
This datasheet PDF includes multiple part numbers: L2SC3356WT3G, L2SC3356WT1G.
Please refer to the document for exact specifications by model.
L2SC3356WT3G, L2SC3356WT1G, High-Frequency Amplifier Transistor
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP C
L2SC3356WT3G Features
* We declare that the material of product compliance with RoHS requirements.
* Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (
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