L2SC3356WT3G
Leshan Radio Company
157.13kb
High-frequency amplifier transistor. The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic rang
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L2SC3356WT1G - High-Frequency Amplifier Transistor
(Leshan Radio Company)
DATA SHEET
LESHAN RADIO COMPANY, LTD.
DESCRIPTION
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF .
L2SC3356LT1 - High-Frequency Amplifier Transistor
(Leshan Radio Company)
DATA SHEET
LESHAN RADIO COMPANY, LTD.
L2SC3356LT1
3
DESCRIPTION
..
1 2
The L2SC3356LT1 is an NPN silicon epitaxial transistor des.
L2SC3356LT1G - High-Frequency Amplifier Transistor
(Leshan Radio Company)
DATA SHEET
LESHAN RADIO COMPANY, LTD.
DESCRIPTION
The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF.
L2SC3837DW1T1 - High-Frequency Amplifier Transistor
(Leshan Radio Company)
LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier Transistor
.. z Features 1.High transition frequency.(fT=1.5GHz) 2.Low output ca.
L2SC3837LT1 - High-Frequency Amplifier Transistor
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LESHAN RADIO COMPANY, LTD.
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L2SC3837LT3G - High-Frequency Amplifier Transistor
(Leshan Radio Company)
LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
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z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(T.
L2SC3837QLT1G - High-Frequency Amplifier Transistor
(Leshan Radio Company)
LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
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z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain..
L2SC3837QLT3G - High-Frequency Amplifier Transistor
(Leshan Radio Company)
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L2SC3838LT1G - High-Frequency Amplifier Transistor
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z Features 1.High transition frequency.(Typ.fT=3.2GHz) 2.Small rbb`Cc and high gain.(T.