L2SC3356WT1G

High-Frequency Amplifier Transistor

Leshan Radio Company

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Datasheet Details

Part number:

L2SC3356WT1G

Manufacturer:

Leshan Radio Company

File Size:

157.13 KB

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Description:

High-frequency amplifier transistor.
DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356WT1is an NPN silicon epitaxial transi.
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF a.

✔ L2SC3356WT1G Features

We declare that the material of product compliance with RoHS requirements.
Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0

✔ L2SC3356WT1G Application

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC3356WT1G S-

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L2SC3356WT1G High-Frequency Amplifier Transistor Leshan Radio Company

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