L2SC3356WT1G Datasheet, Transistor, Leshan Radio Company

L2SC3356WT1G Features

• Transistor
• We declare that the material of product compliance with RoHS requirements.
• Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.

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Part number:

L2SC3356WT1G

Manufacturer:

Leshan Radio Company

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157.13kb

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📄 Datasheet

Description:

High-frequency amplifier transistor. The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic rang

L2SC3356WT1G Application

• Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC3356WT1G S-L2SC3356WT1G 3 ORDERING IN

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L2SC3356WT1G

Leshan Radio Company

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