L2SC3356WT1G Datasheet - Leshan Radio Company

L2SC3356WT1G, High-Frequency Amplifier Transistor

DATA SHEET LESHAN RADIO COMPANY, LTD..
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

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Datasheet Details

Part number:

L2SC3356WT1G

Manufacturer:

Leshan Radio Company

File Size:

157.13 KB

Description:

High-Frequency Amplifier Transistor

Features

* We declare that the material of product compliance with RoHS requirements.
* Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (

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L2SC3356WT1G High-Frequency Amplifier Transistor Leshan Radio Company

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