L2SC3356WT1G - High-Frequency Amplifier Transistor

Leshan Radio Company

📥 Download Datasheet

L2SC3356WT1G Datasheet Preview — Preview of L2SC3356WT1G PDF

Datasheet Details

Part number	L2SC3356WT1G
Manufacturer	Leshan Radio Company
File Size	157.13 KB
Description	High-Frequency Amplifier Transistor
Datasheet	L2SC3356WT1G-LeshanRadioCompany.pdf

L2SC3356WT1G Product details

Description

The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.L2SC3356WT1G S-L2SC3356WT1G 3 ORDERING INFORMATION Device L2SC3356WT1G S-L2SC3356WT1G L2SC3356WT3G S-L2SC3356WT3G Marking 24 24 Shipping 3000/Tape & Reel 10000/Tape & Reel 1 2 SC-70 FEA

Features

We declare that the material of product compliance with RoHS requirements.
Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz.
High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.

📁 L2SC3356WT1G Similar Datasheet

L2SC3838NLT1G - High-Frequency Amplifier (LRC)
L2SA1576AQLT1G - General Purpose Transistors (LRC)
L2SA1576AQLT3G - General Purpose Transistors (LRC)
L2SA1576AQT1G - General Purpose Transistors (LRC)
L2SK3018WT1G - N-channel MOSFET (LRC)
L2SK3019LT1G - Silicon N-Channel MOSFET (LRC)
L2SK801LT1G - Small Signal MOSFET (LRC)

Other Datasheets by Leshan Radio Company

L2SC3356WT3G - High-Frequency Amplifier Transistor
L2SC3356LT1 - High-Frequency Amplifier Transistor
L2SC3356LT1G - High-Frequency Amplifier Transistor
L2SC3837DW1T1 - High-Frequency Amplifier Transistor
L2SC3837LT1 - High-Frequency Amplifier Transistor
L2SC3837LT1G - High-Frequency Amplifier Transistor

Published: Aug 7, 2015 |