L2SC3356LT1G - High-Frequency Amplifier Transistor

Leshan Radio Company

Datasheet Details

Part number	L2SC3356LT1G
Manufacturer	Leshan Radio Company
File Size	421.63 KB
Description	High-Frequency Amplifier Transistor
Datasheet	L2SC3356LT1G_LeshanRadioCompany.pdf

The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

We declare that the material of product compliance with RoHS requirements.
Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz.
High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.

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Published: Aug 18, 2008 |