L2SC3356LT1G Datasheet (Leshan Radio Company) - High-Frequency Amplifier Transistor

L2SC3356LT1G, High-Frequency Amplifier Transistor

The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

It has dynamic range and good current characteristic.

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L2SC3356LT1G Features

* We declare that the material of product compliance with RoHS requirements.

* Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

* High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA =