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L2SC3356LT1G Datasheet - Leshan Radio Company

L2SC3356LT1G High-Frequency Amplifier Transistor

The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. ORDERING INFORMATION www.DataSheet4U.com L2SC3356LT1G 3 1 Device L2SC3356LT1G L2SC3356LT3G Marking R24 R24 Shipping 3000/Tape .

L2SC3356LT1G Features

* We declare that the material of product compliance with RoHS requirements.

* Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

* High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA =

L2SC3356LT1G_LeshanRadioCompany.pdf

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Datasheet Details

Part number:

L2SC3356LT1G

Manufacturer:

Leshan Radio Company

File Size:

421.63 KB

Description:

High-frequency amplifier transistor.

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