Part number:
L2SC3356LT1G
Manufacturer:
Leshan Radio Company
File Size:
421.63 KB
Description:
High-frequency amplifier transistor.
L2SC3356LT1G_LeshanRadioCompany.pdf
Datasheet Details
Part number:
L2SC3356LT1G
Manufacturer:
Leshan Radio Company
File Size:
421.63 KB
Description:
High-frequency amplifier transistor.
L2SC3356LT1G, High-Frequency Amplifier Transistor
The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
ORDERING INFORMATION www.DataSheet4U.com L2SC3356LT1G 3 1 Device L2SC3356LT1G L2SC3356LT3G Marking R24 R24 Shipping 3000/Tape
L2SC3356LT1G Features
* We declare that the material of product compliance with RoHS requirements.
* Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA =
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