Low-Band Datasheet | Specifications & PDF Download

Product Folder Order Now Technical Documents Tools & Software Support & Community ATL431LI ATL432LI SLVSDU6D – JULY 2017 – REVISED NOVEMBER 2019

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DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x H

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OPA830 SBOS263B − AUGUST 2004 − REVISED JANUARY 2005 Low-Power, Single-Supply, Wideband Operational Amplifier FEATURES D D D D D D D D HIGH BANDWIDTH

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE3240

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OPA695 OPA695 OPA695 SBOS256 – AUGUST 2002 Ultra-Wideband, Current-Feedback OPERATIONAL AMPLIFIER With Disable Output Intercept (dBm) PRODUCT PREV

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www.DataSheet4U.com C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE425S01 is a H

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® OPA 465 0 OPA4650 DEMO BOARD AVAILABLE OPA 465 0 Wideband, Low Power, Quad Voltage Feedback OPERATIONAL AMPLIFIER FEATURES q LOW POWER: 50mW

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OPA847 OPA 847 SBOS251C – JULY 2002 – REVISED OCTOBER 2003 Wideband, Ultra-Low Noise, Voltage-Feedback OPERATIONAL AMPLIFIER with Shutdown FEATURES

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DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKA

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www.DataSheet4U.com OPA690 OPA 690 OPA6 90 SBOS223A—DECEMBER 2001 – REVISED JULY 2002 Wideband, Voltage Feedback OPERATIONAL AMPLIFIER With Disable

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LOW NOISE L TO Ku BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.5 Ga 3 2.5 2 1.5 1 NF 0.5 0 1

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NTE10 Silicon NPN Transistor UHF Low Noise Wide–Band Amplifier Features: D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) D High Power Gain: MAG = 14dB

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE434S01 is a Herero

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OPA694 SBOS319C − SEPTEMBER 2004 − REVISED NOVEMBER 2004 Wideband, Low-Power, Current Feedback Operational Amplifier FEATURES D D D D D D D UNITY GAI

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MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in

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DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x H

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE3240

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