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XL1001 - 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier
www.DataSheet4U.com 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1001 Chip Device Layout Features Balanced Design Excell.SL5018 - LOW POWER NARROW BAND FM IF
Semiconductor SL5018/P LOW POWER NARROW BAND FM IF Description The SL5018/P is designed for use in FM dual conversion communication. It contains a c.Q62702-B792 - Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance)
Silicon Variable Capacitance Diode BB 641 q q q For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance 1 2 Type Ordering Co.NE32484A-T1 - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a H.STG3220 - Low voltage high bandwidth dual SPDT switch
STG3220 Low voltage high bandwidth dual SPDT switch Features ■ Ultra low power dissipation: – ICC = 1 μA (max.) at TA = 85 °C ■ Low ON resistance: .NE3517S03 - K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.ATL431LI - High Bandwidth Low-Iq Programmable Shunt Regulator
Product Folder Order Now Technical Documents Tools & Software Support & Community ATL431LI ATL432LI SLVSDU6D – JULY 2017 – REVISED NOVEMBER 2019 .EC3H07B - UHF to S Band Low-Noise Amplifier and OSC Applications
Ordering number : ENN6578 EC3H07B NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S Band Low-Noise Amplifier and OSC Applications Features • .NE76000 - LOW NOISE L TO Ku BAND GaAs MESFET
LOW NOISE L TO Ku BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.5 Ga 3 2.5 2 1.5 1 NF 0.5 0 1 .NTE10 - Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
NTE10 Silicon NPN Transistor UHF Low Noise Wide–Band Amplifier Features: D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) D High Power Gain: MAG = 14dB.NE32484A - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a H.NE32484A-T1A - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a H.NE32584C-T1A - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32.NE325S01-T1B - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
www.DataSheet4U.com C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF.NE4210S01 - X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a.NE434S01 - C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE434S01 is a Herero .STG3693 - Low Voltage High Bandwidth Quad SPDT Switch
www.DataSheet4U.com STG3693 Low voltage high bandwidth Quad SPDT switch Features ■ ■ ■ ■ ■ ■ ■ ■ Ultra low power dissipation: – ICC = 0.2µA (Max.) a.TGA4506 - K Band Low Noise Amplifier
Advance Product Information July 19, 2005 K Band Low Noise Amplifier Key Features • • • • • • • TGA4506 Typical Frequency Range: 20 - 27 GHz 21 dB .55GN01S - UHF Wide-band Low-noise Amplifier Applications
Ordering number : ENN7687 55GN01S www.DataSheet4U.com NPN Epitaxial Planar Silicon Transistor 55GN01S Features • • • UHF Wide-band Low-noise Ampli.