NE24200
NEC
85.88kb
C to ka band super low noise amplifier n-channel hj-fet chip. NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to crea
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NE24283B - ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
(California Eastern)
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED)
FEATURES
• VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 11.0 dB.
NE2001-VA20 - Near edge thermal printhead (8 dots / mm)
(Rohm)
Printheads
Near edge thermal printhead (8 dots / mm)
NE2001-VA20A
The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medi.
NE2001-VA20A - Near edge thermal printhead (8 dots / mm)
(Rohm)
Printheads
Near edge thermal printhead (8 dots / mm)
NE2001-VA20A
The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medi.
NE2002-VA10A - Near edge thermal printhead (8 dots / mm)
(Rohm)
Printheads
Near edge thermal printhead (8 dots / mm)
NE2002-VA10A
The NE2002–VA10A is a near edge thin–film thermal printhead, where the printing med.
NE2004-VA10A - Near edge thin film thermal printhead (8 dots / mm)
(Rohm)
Printheads
Near edge thin film thermal printhead (8 dots / mm)
NE2004-VA10A
The NE2004–VA10A is a near edge thin–film thermal printhead, where the pr.
NE202 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET
(NEC)
.
NE20248 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET
(NEC)
.
NE20283A - ULTRA LOW NOISE K BAND HETERO JUNCTION FET
(NEC)
.
NE202930 - Silicon NPN Epitaxial High Frequency Transistor
(Renesas)
PreliminaryData Sheet
NE202930
Silicon NPN Epitaxial High Frequency Transistor
FEATURES
• • • • High transition frequency fT = 11 GHz TYP. Ideal for .
NE202XX - ULTRA LOW NOISE K BAND HETERO JUNCTION FET
(NEC)
.