M-959 Datasheet | Specifications & PDF Download

TB2959HQ Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2959HQ Maximum Power 47W BTL  4-ch Audio Power IC 1. Description The TB2959HQ is a

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M-959 Dial Pulse Counter and Hook Status Monitor Features • Time-guarded dial pulse counting • 10 or 20 PPS dialing speeds pin selectable • Tri-state

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30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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4-Channel, 500 MSPS DDS with 10-Bit DACs AD9959 FEATURES 4 synchronized DDS channels @ 500 MSPS Independent frequency/phase/amplitude control between

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MCC Features •
     omponents 20736 Marilla Street Chatsworth  # $ % # 2SC1959 Audio fr

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page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 EF184 sheet 1 1 1 2 2 2 3 A A B B C D E FP date 1959.03.03 1960.11.11 1962.05.05 1959.03.03 1960.11.11 1962

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MITSUBISHI HYBRID ICs M57959L HYBRID IC FOR DRIVING IGBT MODULES Block Diagram 4 VCC 14 185Ω Detect Circuit Timer and Reset Circuit Interface 5 VOUT

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® L4959 MULTIFUNCTION VOLTAGE REGULATOR FOR HOME AUDIO 4 OUTPUTS: 12V (1.3A); 12V (0.8A); 8.6V (0.6A); 5.6V (0.25A) STANDBY OUT1 12V(a), OUT2 12V(b)

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ALLOY/STRUCTURAL — MACHINE SCREWS NAS600 - NAS603 MACHINE SCREWS NAS1096 HEX HEAD SCREWS • Phillips Pan Head • Alloy Steel (8740) • Finish - Cadmiu

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® RT9598 MOSFET Integrated Smart Photoflash Capacitor Charger with IGBT Driver General Description The RT9598 is a complete photoflash module soluti

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100V P-Channel MOSFETs PDD0959 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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page 1 2 3 4 AD1 sheet 1 1 1 FP date 1947.12.01 1953.12.12 1959.12.12 1999.02.25

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60V P-Channel MOSFETs PDC6959X General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 650V (Min) ·High Switching Speed ·Minimum Lot-to-Lot

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page 1 2 3 4 AL1 sheet 1 2 2 FP date 1959.12.12 1947.12.01 1953.12.12 1999.06.26

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40V P-Channel MOSFETs PDC4959X General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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