M13 Datasheet | Specifications & PDF Download

45 Features • • • • • • • • EMI filtering-MIL-STD-461E Transient protection-MIL-STD-704E Environments-MIL-STD-810, MIL-STD-202 Environmental stress sc

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8.0M Series Transient Voltage Suppressors family DO-218 Features ‧High current capability ‧Low Forward Voltage Drop ‧Low reverse current ‧Low therma

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8.0M Series Transient Voltage Suppressors family DO-218 Features ‧High current capability ‧Low Forward Voltage Drop ‧Low reverse current ‧Low therma

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NJM13600/13700 DUAL OPERATIONAL TRANSCONDUCTANCE AMPLIFIER ■ GENERAL DESCRIPTION The NJM13600/13700 consist of two current controlled trans conductanc

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LM138/LM338 5-Amp Adjustable Regulators May 1998 LM138/LM338 5-Amp Adjustable Regulators General Description The LM138 series of adjustable 3-termin

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45 Features • • • • • • • • • EMI filtering-MIL-STD-461E Transient protection-MIL-STD-704E 1 Environments-MIL-STD-810, MIL-STD-202 Environmental stres

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M Series 50 Watt AC-DC Converters Input voltage range 85 264 V AC 1, 2 or 3 isolated outputs up to 48 V DC 4 kV AC I/O electric strength test volta

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MITSUBISHI (OPTICAL DEVICES) FU-68PDF-V510MxxxB 1.58 µm (L-Band) DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS

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6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application High speed power switching F

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ZMM2V4 - ZMM75 500mW SURFACE MOUNT ZENER DIODE Features · · · · Planar Die Construction Sealed Glass Case Ideally Suited for Automated Insertion 2.4V

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ESMT M13S5121632A (2T) DDR SDRAM 8M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clo

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS M13 THRU M20 TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SILICON RECTIFIER VOLTA

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www.DataSheet4U.com ESMT Revision History Revision 0.1 (28 Apr. 2006) - Original M13S2561616A Revision 1.0 (07 Jun. 2006) - Delete Preliminary at e

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4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω

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ESMT M13S64164A (2Y) DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock

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ESMT M13S64164A (2Y) DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock

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ESMT M13S64164A (2Y) DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock

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ESMT M13S64164A (2Y) DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock

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