MD-60SM Datasheet | Specifications & PDF Download

SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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FGH60N60SMD — 600 V, 60 A Field Stop IGBT November 2013 FGH60N60SMD 600 V, 60 A Field Stop IGBT Features • Maximum Junction Temperature: TJ = 175oC

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FGY75N60SMD — 600 V, 75 A Field Stop IGBT FGY75N60SMD 600 V, 75 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sa

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IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generati

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IGBT - Field Stop 600 V, 40 A FGH40N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generati

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IGBT - Field Stop 600 V, 60 A FGH60N60SMD-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop Trench

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2-Electrode Gas Discharge Tubes 1：Dimension(mm) Φ6*4mm 5KA Surface Mount 2:Main Applications •PCI Cards protection •Telephone/Fax/Modem protection •

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2-Electrode Gas Discharge Tubes 1：Dimension(mm) Φ8*6mm 5KA Surface Mount 2:Main Applications •PCI Cards protection •Telephone/Fax/Modem protection •

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IGBT - Field Stop 600 V, 40 A FGH40N60SMD-F085 Description Using Novel Field Stop IGBT Technology, onsemi’s new series of Field Stop IGBTs offer the

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FGH40N60SMD — 600 V, 40 A Field Stop IGBT FGH40N60SMD 600 V, 40 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = 175oC • Positive Tem

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FGH40N60SMDF — 600 V, 40 A Field Stop IGBT November 2013 FGH40N60SMDF 600 V, 40 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = 175

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2-Electrode Gas Discharge Tubes 1：Dimension(mm) Φ5*5mm 5KA Surface Mount 2:Main Applications •PCI Cards protection •Telephone/Fax/Modem protection •

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IGBT - Field Stop 600 V, 40 A FGH40N60SMDF Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of field stop 2nd generat

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FGAF20N60SMD 600 V 20 A Field Stop IGBT April 2013 FGAF20N60SMD 600 V, 20 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = • High Cu

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FGAF40N60SMD 600 V 40 A Field Stop IGBT May 2013 FGAF40N60SMD 600 V, 40 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = • High Curr

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IGBT, Field Stop 600 V, 75 A FGY75N60SMD General Description Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generatio

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SGH80T60SMD SGH80T60SMD 600V 80A FieldStop Trench IGBT Features • FieldStop Trench Technology, Positive temperature coefficient • VCE(sat)=1.45V@IC=8

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