FGH60N60SMD-F085

IGBT

ON Semiconductor

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Co

* efficient for easy Parallel Operating

* High Current Capability

* Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A

* High Input Impedance

* Tightened Parameter Dist

FGH60N60SMD-F085

374.58 KB

Igbt.

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FGH60N60SMD-F085 IGBT ON Semiconductor

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