FGH60N60

IGBT

ON Semiconductor

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Co

* efficient for easy Parallel Operating

* High Current Capability

* Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A

* High Input Impedance

* Fast Switching: EOFF = 7

FGH60N60

481.22 KB

Igbt.

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TAGS

FGH60N60 IGBT ON Semiconductor

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