MG630 Datasheet | Specifications & PDF Download

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MG6303WZ 650V 30A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 30A 1.5V 1137pcs lFeatures

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MG6307WZ 650V 25A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 25A 1.5V 1328pcs lFeatures

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MG6308WZ 650V 75A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 75A 1.5V 512pcs lFeatures

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NEW PRODUCT DMG6301UDW 25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 25V RDS(ON) 4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V ID TA = +2

Rating: 1 ★ (1 votes)