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Central Semiconductor
MJE171 - POWER TRANSISTOR
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .
ETC
P4SSMJ170A - SURFACE MOUNT DEVICES
SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE PLASTIC MATERIAL USED CARRIES UL 94V-0 Marking Zener Voltage VZ (V) @ IZT Min Nom Max Test cur.
ON Semiconductor
MJD117 - Complementary Darlington Power Transistor
MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switc.
Fairchild Semiconductor
MJD117 - PNP Silicon Darlington Transistor
MJD117 MJD117 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applicati.
Inchange Semiconductor
MJD117 - Silicon PNP Power Transistor
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applicat.
CDIL
MJD117 - COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 .
ETC
MJ-17 - DC Jack
www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com .
CDIL
MJE172 - PNP PLASTIC POWER TRANSISTORS
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE.
Central Semiconductor
MJE172 - POWER TRANSISTOR
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .
Inchange Semiconductor
MJE172 - Silicon PNP Power Transistors
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification MJE172 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(S.
Inchange Semiconductor
MJE170 - Silicon PNP Power Transistors
isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -40V ·DC Current Gain— : hFE = 30(Min) @ IC= -0.5 A .
JCET
MJD117 - PNP Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD117 TRANSISTOR (PNP) TO-251-3L FEATURES z High DC .
Motorola Inc
MJ11017 - 30 AMPERE DARLINGTON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11017/D Complementary Darlington Silicon Power Transistors . . . designed for use as.
GME
MJD117 - Epitaxial Planar PNP Transistor
Epitaxial Planar PNP Transistor FEATURES High DC Current Gain. Built-in a Damper Diode at E-C. Pb Lead-free Lead Formed for Surface Mount Ap.
Inchange Semiconductor
MJH11017 - Silicon PNP Darlington Power Transistor
isc Silicon PNP Darlington Power Transistor MJH11017 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Vol.
KEC
MJD117 - EPITAXIAL PLANAR PNP TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA MJD117/L EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL .
ST Microelectronics
MJE172 - Low voltage high speed switching NPN transistor
MJE172 Low voltage high speed switching NPN transistor Features ■ High speed switching ■ NPN device t(s)Applications c■ Audio amplifier u■ High sp.
Fairchild
MJE172 - PNP Epitaxial Silicon Transistor
MJE170/171/172 MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications 1 TO-126 2.Collector 3.Base PNP Epitaxial S.
ON Semiconductor
MJE171G - Complementary Plastic Silicon Power Transistors
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed fo.
Motorola
MJH11017 - 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH11017/D MJH10012 (See MJ10012) Complementary Darlington Silicon Power Transistors .