MJ-18 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16018/D Designer's NPN Silicon Power Transistors 1.5 kV SWITCHMODE Series These tra

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SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE PLASTIC MATERIAL USED CARRIES UL 94V-0 Marking Zener Voltage VZ (V) @ IZT Min Nom Max Test cur

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18204/D ™ Data Sheet SWITCHMODE™ NPN Designer's Bipolar Power Transistor for Elect

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16018/D Designer's NPN Silicon Power Transistors 1.5 kV SWITCHMODE Series These tra

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www.DataSheet4U.com MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE180/181/182 www.datasheet4u.com DESCRIPTION ·With TO-126 package ·C

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isc Silicon NPN Power Transistor MJF18004 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-t

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min)- MJE5180 = 140V(Min)- MJE5181 = 160V(Min)

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MJE182 Low voltage high speed switching NPN transistor Features ■ High speed switching ■ NPN device t(s)Applications c■ Audio amplifier u■ High sp

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE

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SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE PLASTIC MATERIAL USED CARRIES UL 94V-0 Marking Zener Voltage VZ (V) @ IZT Min Nom Max Test cur

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SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE PLASTIC MATERIAL USED CARRIES UL 94V-0 Marking Zener Voltage VZ (V) @ IZT Min Nom Max Test cur

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16018/D Designer's NPN Silicon Power Transistors 1.5 kV SWITCHMODE Series These tra

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package www.datasheet4u.com ·High voltage ,high sp

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SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE PLASTIC MATERIAL USED CARRIES UL 94V-0 Marking Zener Voltage VZ (V) @ IZT Min Nom Max Test cur

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isc Silicon NPN Power Transistor MJE181 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 60V ·DC Current Gain— : hFE = 30(Min) @ IC=

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min)- MJE5180 = 140V(Min)- MJE5181 = 160V(Min)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switc

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