MJE18008 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

MJE18008

Manufacturer:

INCHANGE

File Size:

212.12kb

Download:

📄 Datasheet

Description:

Npn transistor.

Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min)

High Switching Speed

Minimum Lot-to-Lot variation

MJE18008 Application

• Applications
• Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25

TAGS

MJE18008

INCHANGE

📁 Related Datasheet

MJE18002 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari.

MJE18002 - POWER TRANSISTOR (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switc.

MJE18002 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE18002 .. DESCRIPTION ·With TO-220 package ·High vo.

MJE18002D2 - POWER TRANSISTORS (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002D2/D MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power T.

MJE18004 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari.

MJE18004 - POWER TRANSISTOR (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switc.

MJE18004 - Switch-mode NPN Bipolar Power Transistor (ON)
MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific s.

MJE18004 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package .. ·High voltage ,high .

MJE18004D2 - POWER TRANSISTORS (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004D2/D MJE18004D2 Designer's ™ Data Sheet High Speed, High Gain Bipolar NPN Po.

MJE18004G - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor MJE18004G DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·G:Pb-Free Pa.