MJ10012 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJ10012 DESCRIPTION ·With TO-3 package ·High voltage,high current ·DARLIN

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Power Dissipation ·DARLINGT

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MJ10012 NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characterist

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MJ10012 NPN Silicon Power Darlington Transistor TO3 Type Package Description: The MJ10012 is high−voltage, high−current Darlington transistor in a TO

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10012/D NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–vo

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