MJD128 Datasheet | Specifications & PDF Download

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VC

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www.DataSheet4U.com MJD128T4G (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications Features http://o

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