MJD148 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 85(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER TRANSISTORS MJD148 DPAK (TO-252)

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MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. •

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