MJD243 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD243/D Plastic Power Transistor MJD243* *Motorola Preferred Device DPAK For Surfac

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)

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MJD243 (NPN), MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low vol

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MJD243 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package.  / Features VCEO，。 Low Coll

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